The direct tunneling effect in SiC Schottky contacts is simulated based on electron tunneling probabilities through a triangular barrier, which are accurately solved using the one-dimensional time-independent Schrdinger equation. 通过精确求解一维定态薛定谔方程得到电子通过三角形势垒的隧穿几率,模拟了SiC肖特基接触的直接隧穿效应。